Elpida Initiates Mass Production of 40nm 2Gb DDR3 SDRAM

Just two months after completing development of the smallest 2Gb DDR3 SDRAM using 40nm process technology, Elpida has just announced that its Hiroshima Plant has begun volume production of it.

The new 2Gb DDR3 SDRAM achieves 44% more chips per wafer compared with the 50nm DDR3 SDRAM and a 100% yield for DDR3 products that operate at 1.6Gbps. In addition to the DDR3 standard 1.5V, it also supports 1.2V and 1.35V operation, with reduced power consumption of around 50%.

Depending on conditions in the DRAM market, Elpida may transfer 40nm process technology to foundry partners ProMOS and Winbond to expand production based on this technology to an even higher level.

One Response to “Elpida Initiates Mass Production of 40nm 2Gb DDR3 SDRAM”

  1. Everett Quibodeaux Says:

    This was anther reason Hunt and the Chiefs front office wanted so badly to beat the Vikings in ’69; the players were aware of the bad blood although probably not as motivated by it.

Leave a Reply