Samsung today announced that it has developed and start sampling 100, 200 and 400 gigabyte multil-level-cell solid state drives for use as the primary storage in enterprise storage systems.

The 2.5-inch drive employs 30nm MLC NAND flash chips with a Toggle DDR interface and a controller that use a 3Gb/s SATA interface. It can process random read commands at 43,000 input/outputs per second (IOPS) and random writes at 11,000 IOPS. This compares to a 15K RPM HDD which has an IOPS rate of 350, amounting to a 120X gain in random IOPS read performance and a 30X gain in random IOPS write performance.

Additionally, the new Samsung SSD features an ‘end-to-end data protection’ function with advanced data encryption algorithm to assure reliability and security for the drive.

Starting next month, Samsung will begin mass producing its new MLC-based enterprise drives.