Qualcomm’s Snapdragon 820/821 has been a great commercial success, and almost all the flagship smartphones of 2016 are using them, except those from Meizu (the patent dispute) and Huawei. The chip giant has recently announced its next-generation Snapdragon processor, the 10nm Snapdragon 835.
By using Samsung’s new 10nm FinFET process, the new chip brings up to a 30 percent increase in area efficiency with a 27 percent improvement in performance or up to 40 percent less power consumption compared to the previous version. These process improvements, combined with a more advanced chip design, can create significant battery life enhancements.
Qualcomm didn’t disclose further details of Snapdragon 835, and it’s uncertain if it’s featuring four or eight cores. Given the 27% of performance lift, it’s likely to be still built on 4-core Kryo architecture.
By the way, it’s just a paper launch. The devices powered by the new chip are expected to be showcased at CES in January 2017, and if things go as planned, Galaxy S8 will be the first smartphone to feature it.