Samsung has just announced its mass production of the industry’s first 256GB embedded memory based on the Universal Flash Storage (UFS) 2.0 standard which will be widely used for next-gen high-end mobile devices.
Thanks to the company’s advanced V-NAND flash memory chips, the new UFS memory is nearly twice as fast as a SATA SSD for PCs, by handling up to 45,000 and 40,000 input/output operations per second (IOPS) for random reading and writing respectively, over two times faster than the previous generation of UFS memory (19,000 and 14,000 IOPS).
The 256GB UFS memory delivers sequential reading/writing of 850MB/260MB per second, and also provides support for the USB 3.0 interface – you can send a 5GB full-HD video clip in just 12 seconds.
Samsung expects to debut the new memory in September, and hopefully use it for Galaxy Note 6.
Shall not be reproduced without permission：EXPREVIEW » Samsung Intros 256GB Phone Storage – Perhaps for Galaxy Note 6